Band Diagram of Metal-Insulator-Magnetic Semiconductor (La0.85Sr0.15MnO3) Structure at Room Temperature
- 1 August 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (8B) , L999
- https://doi.org/10.1143/jjap.37.l999
Abstract
We investigated electrical properties of a La0.85Sr0.15MnO3 magnetic semiconductor through observation of photoinduced current and electron-beam-induced current (EBIC) across the Al/(100)SrTiO3/(100)La0.85Sr0.15MnO3 metal-insulator-semiconductor (MIS) structure at room temperature. The test specimens were prepared by the Ar–F excimer laser ablation technique. According to the current flowing direction, it was observed that the La0.85Sr0.15MnO3 band bends downward at and near the interface. Furthermore, from determination of the flat-band condition, the work function of (100)La0.85Sr0.15MnO3 epitaxial film was estimated to be ∼4.8 eV.Keywords
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