Metal-Insulator-Superconductor Field-Effect-Transistor Using SrTiO3/YBa2Cu3Oy Heteroepitaxial Films
- 1 May 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (5B) , L612
- https://doi.org/10.1143/jjap.31.l612
Abstract
Planar-type metal-insulator-superconductor field-effect-transistors (MISFET) were fabricated and their current modulation characteristics were investigated. The FET had a structure of Al-gate metal/(100)SrTiO3-gate insulator/(001)YBa2Cu3O y -channel, where the oxide layers were grown by selective heteroepitaxy employing pulsed ArF excimer laser deposition. The FET gate was 10 µm long and 100 µm wide. Apparent field-effect modulation of drain current was seen in both the normal (T>T c) and superconducting (T<T c) states. In the superconducting state, not only the critical current but also flux-flow resistance were appreciably changed according to the applied gate voltage.Keywords
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