Investigation of electric field effect in PrBa2Cu3O7−x thin films by capacitance-voltage measurement

1 February 1991

journal article
letter
Published by AIP Publishing in Journal of Applied Physics

Vol. 69 (3) , 1778-1780
https://doi.org/10.1063/1.347231

Abstract

Electric field effect in PrBa₂Cu₃O_7−x thin films is investigated by capacitance‐voltage (C‐V) measurement. An SrTiO₃ thin film with a dielectric constant of 250 is used for the insulating layer in the C‐V measurement to compensate for the high carrier density of PrBa₂Cu₃O_7−x thin films. A PrBa₂Cu₃O_7−x ‐SrTiO₃ ‐Au capacitor reveals capacitance decrease at positive voltage of the Au electrode in the C‐V curve which agrees with the calculated one derived from the metal‐insulator‐semiconductor model. This result indicates the existence of a kind of electric field effect at the PrBa₂Cu₃O_7−x film surface layer.

This publication has 5 references indexed in Scilit:

Electric Field Effect on the Al-MgO-YBa₂Cu₃O_y Structure
Japanese Journal of Applied Physics, 1990
Magnetic ordering and superconductivity in $Y_{1 - x}$ $\Pr_{x}$ ${Ba}_{2}$ ${Cu}_{3}$ $O_{7 - y}$
Physical Review B, 1989
Upper critical field and normal-state properties of single-phase $Y_{1 - x}$ $\Pr_{x}$ ${Ba}_{2}$ ${Cu}_{3}$ $O_{7 - γ}$ compounds
Physical Review B, 1989
Concentrations and mobilities of holes and electrons in a crystal of a 90K oxide superconductor from analysis of ab-plane resistivity and hall data
Solid State Communications, 1989
High-temperature order-disorder phase transition in the superconductor $Y_{1} {Ba}_{2} {Cu}_{3} O_{6 + δ}$ observed by electrical resistivity measurements
Physical Review B, 1987