VLSI Processing, Radiation, and Hardening
- 1 January 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 25 (6) , 1469-1472
- https://doi.org/10.1109/tns.1978.4329555
Abstract
Process-induced radiation damage to silicon dioxide films is expected to be commonplace for VLSI circuit fabrication. This might be expected to be most serious for the production of radiation-hardened VLSI. In this paper, the oxide damage due to ion processing is reviewed and the radiation levels associated with advanced lithographic techniques are estimated. Implications for radiation-hardened VLSI circuits are considered.Keywords
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