Floating-body problems and benefits in fully depleted SOI CMOS VLSI circuits

Publisher Website

9 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1991.235438

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's
IEEE Transactions on Electron Devices, 1991
Silicon-on-Insulator Technology
Published by Springer Nature ,1991
SOI design for competitive CMOS VLSI
IEEE Transactions on Electron Devices, 1990
Process integration and device performance of a submicrometer BiCMOS with 16-GHz f/sub t/ double poly-bipolar devices
IEEE Transactions on Electron Devices, 1989
A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD
IEEE Transactions on Electron Devices, 1988