Process integration and device performance of a submicrometer BiCMOS with 16-GHz f/sub t/ double poly-bipolar devices
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (5) , 890-896
- https://doi.org/10.1109/16.299670
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- A 12-ns ECL I/O 256 K*1-bit SRAM using a 1- mu m BiCMOS technologyIEEE Journal of Solid-State Circuits, 1988
- 0.5 Micron BICMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- CMOS/bipolar circuits for 60-MHz digital processingIEEE Journal of Solid-State Circuits, 1986