Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (8) , 1247-1256
- https://doi.org/10.1109/16.2544
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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