A 48ps ECL in a self-aligned bipolar technology

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XXX, 58-59
https://doi.org/10.1109/isscc.1987.1157152

Abstract

A polysilicon edge base contact bipolar technology with a gate array of 48ps and a mixed ECL-I²L frequency divider operating at 10GHz will be described.

Keywords

CIRCUITS
FREQUENCY CONVERSION
PARASITIC CAPACITANCE
ELECTRODES
FLIP-FLOPS
LABORATORIES
DELAY EFFECTS
RESISTORS
ISOLATION TECHNOLOGY
SILICON

This publication has 4 references indexed in Scilit:

IIIA-1 a self-aligned emitter-base contact technique for AlGaAs/GaAs heterojunction bipolar transistors
IEEE Transactions on Electron Devices, 1986
73ps si bipolar ECL circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
An 80ps 2500-gate bipolar macrocell array
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985
Self-aligned transistor with sidewall base electrode
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1981