Capacitative dispersion in p–n heterojunctions
- 16 January 1970
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 1 (1) , 57-64
- https://doi.org/10.1002/pssa.19700010107
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The capacitance of p-n heterojunctions including the effects of interface statesIEEE Transactions on Electron Devices, 1967
- A review of semiconductor heterojunctionsJournal of Materials Science, 1967
- The photovoltaic response of nGe-nSi heterodiodesSolid-State Electronics, 1966
- Alloyed Semiconductor HeterojunctionsPhysica Status Solidi (b), 1966
- Optical phenomena in GeGaP heterojunctionsSolid-State Electronics, 1965
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964
- Work Function, Photoelectric Threshold, and Surface States of Atomically Clean SiliconPhysical Review B, 1962
- Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]IBM Journal of Research and Development, 1960