Temperature dependence of the Γ8v-Γ6c gap of GaAs

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Abstract
The photoluminescence (PL) peak positions of the ground state heavy and light‐hole excitons on high‐quality Molecular Beam Epitaxy grown GaAs/AlxGa1−xAs (x=0.3 and 1) multiquantum‐well structures have been experimentally determined in the temperature range 4.2≤T≤340 K. Using these values and the well‐known low‐temperature energy of the GaAs Γ8V‐Γ6C gap [EgΓ(GaAs,T=0 K)=1.5192 eV], we propose the temperature dependence to be EgΓ(GaAs,T)= 1.5192+5.16×10−5×T−1.99×10−6×T2 +2.60×10−9×T3 (EgΓ in eV). The nearly linear variation of EgΓ(GaAs,T) versus the temperature in the range 170 K≤T≤340 K can be approximated by a coefficient (dEgΓ/dT)=−4.4×10−4 eV/K, in excellent agreement with theoretical predictions.