Excitonic Transitions in Photoluminescence and Reflectivity of GaAs/Al _x Ga _{1- x} As Superlattices

This publication has 11 references indexed in Scilit:

• Temperature dependence of photoreflectance line shapes in GaAsAlGaAs multiple quantum wells
  Superlattices and Microstructures, 1987
• Antiferromagnetic order and high-temperature superconductivity
  Physical Review B, 1987
• Hole subbands in strained GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As quantum wells: Exact solution of the effective-mass equation
  Physical Review B, 1987
• The excitonic properties and temperature behaviour of the photoluminescence from GaAs-GaAlAs multiple quantum well structures
  Solid State Communications, 1987
• Unambiguous observation of the2sstate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structures
  Physical Review B, 1986
• Improved assessment of structural properties of ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/GaAs heterostructures and superlattices by double-crystal x-ray diffraction
  Physical Review B, 1986
• Reflectance of two-dimensional excitons in GaAs-AlGaAs quantum wells
  Physical Review B, 1984
• Photoluminescence of AlxGa1?xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy
  Applied Physics A, 1984
• Superlattice band structure in the envelope-function approximation
  Physical Review B, 1981
• Observation of the excited level of excitons in GaAs quantum wells
  Physical Review B, 1981