A 25 ns switching time MachZehnder modulator in as-deposited a-Si:H
- 9 April 2012
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 20 (9) , 9351-9356
- https://doi.org/10.1364/oe.20.009351
Abstract
A very simple and fast MachZehnder electro-optic modulator based on a p-i-n configuration, operating at λ = 1.55 μm, has been fabricated at 170°C using the low cost technology of hydrogenated amorphous silicon (a-Si:H). In spite of the device simplicity, refractive index modulation was achieved through the free carrier dispersion effect resulting in characteristic rise and fall times of ~2.5 ns. By reverse biasing the p-i-n device, the voltage-length product was estimated to be Vπ∙Lπ = 40 V⋅cm both from static and dynamic measurements. Such bandwidth performance in as-deposited a-Si:H demonstrates the potential of this material for the fabrication of fast active photonic devices integrated on standard microelectronic substrates.Keywords
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