Preparation of a high-J c Y-Ba-Cu-O film at 700 °C by thermal chemical vapor deposition

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Abstract
A high‐Jc Y‐Ba‐Cu‐O superconducting film was successfully prepared at 700 °C on a SrTiO3(100) single‐crystal substrate without postannealing by thermal chemical vapor deposition under a low‐oxygen partial pressure of 0.036 Torr in the total gas introduced into a hot‐wall‐type reactor (total gas pressure: 10 Torr), using 1% O2 balanced with Ar as a reactant gas. The sources for the elements of Ba, Y, and Cu were β‐diketone metal chelates. The film mainly consisted of YBa2Cu3Ox with c‐axis orientation perpendicular to the substrate plane and included small amounts of a‐axis oriented and randomly oriented grains. The film showed the superconducting transition temperature defined by zero resistivity at 89 K. The critical current density based on a 2 μV/cm criterion was 2.2 × 106 A/cm2 at 77.3 K and 0 T.