Photoluminescence of Silicon-Compensated Gallium Arsenide
- 1 June 1966
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (7) , 2909-2910
- https://doi.org/10.1063/1.1782150
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Edge absorption and photoluminescence in closely compensated GaAsSolid State Communications, 1965
- Extremely Intense Light Sources with Narrow-Band Spectral EmissionJournal of the Electrochemical Society, 1965
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Electroluminescence and Photoluminescence of GaAs at 77°KPhysical Review B, 1963
- Behavior of Germanium in Gallium ArsenideJournal of Applied Physics, 1962
- Influence of Arsenic Pressure on the Doping of Gallium Arsenide with GermaniumJournal of Applied Physics, 1960
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Studies on Group III-V Intermetallic CompoundsPhysical Review B, 1957
- Photon-Radiative Recombination of Electrons and Holes in GermaniumPhysical Review B, 1954