A peculiarity of ion beam induced epitaxial crystallization with low implantation energies applied to doped amorphous silicon layers
- 16 June 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 101 (2) , K101-K105
- https://doi.org/10.1002/pssa.2211010243
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Thermal Annealing of Si‐N Absorption Bands in Nitrogen‐Implanted SiliconJournal of the Electrochemical Society, 1985
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Ion-beam induced epitaxy of siliconPhysics Letters A, 1979
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973