Theory of the vertical transport through one, two and three dimensionally confined quantum wells
- 19 September 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 67 (12) , 1131-1133
- https://doi.org/10.1016/0038-1098(88)91070-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State PhotoluminescencePhysical Review Letters, 1988
- Resonant tunneling of electrons of one or two degrees of freedomApplied Physics Letters, 1988
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988
- Electronic structure of single ultrasmall electron devices and device arraysSuperlattices and Microstructures, 1987
- Tunneling escape rate of electrons from quantum well in double-barrier heterostructuresPhysical Review Letters, 1987
- Comment on ‘‘Observation of intrinsic bistability in resonant-tunneling structures’’Physical Review Letters, 1987
- Electronic structure of ultrasmall quantum-well boxesPhysical Review Letters, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Frequency limit of double barrier resonant tunneling oscillatorsApplied Physics Letters, 1986
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985