Investigation of defects in GaAs by dechanneling
- 1 January 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 45 (1-4) , 446-449
- https://doi.org/10.1016/0168-583x(90)90872-r
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Laser Induced Defects in GaAs LayersPhysica Status Solidi (b), 1985
- Axial dechannelingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968