Ionized Cluster Beam Deposition of Polycrystalline Thin Films of CuInSe2

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Abstract
Thin films of CuInSe2 were prepared by three-source ionized cluster beam (ICB) deposition on bare and Mo-coated glass substrates. Of the three elements composing CuInSe2, only In was ionized and accelerated. Single-phase chalcopyrite films were obtained in films prepared at acceleration voltages higher than 1 kV. The Cu/In ratio, as well as the electrical resistivity, was found to be controlled by changing the acceleration voltage. X-ray diffraction patterns, optical micrographs and scanning electron micrographs revealed that the crystallinity and the homogeneity of CuInSe2 grains were improved by application of acceleration voltages. The improvement was more obvious in the films grown on Mo-coated substrates.