Theoretical studies of the effect of strain on the performance of strained quantum well lasers based on GaAs and InP technology
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (3) , 708-716
- https://doi.org/10.1109/3.81381
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy filmsPhysical Review B, 1990
- Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelengthElectronics Letters, 1990
- High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μmElectronics Letters, 1989
- Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fieldsIEEE Journal of Quantum Electronics, 1987
- Theory of photoabsorption in modulation-doped semiconductor quantum wellsPhysical Review B, 1987
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986
- Photoluminescence study of InxAl1−xAs-GaAs strained-layer superlatticesJournal of Applied Physics, 1986
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971