Characterization of interface states at III-V compound semiconductor-metal interfaces
- 15 February 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (4) , 2312-2316
- https://doi.org/10.1063/1.348712
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applicationsIEEE Transactions on Electron Devices, 1990
- High-efficiency GaAs solar cells grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1990
- High-efficiency indium tin oxide/indium phosphide solar cellsApplied Physics Letters, 1989
- Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfacesPhysical Review Letters, 1989
- The advanced unified defect model for Schottky barrier formationJournal of Vacuum Science & Technology B, 1988
- High-speed InP optoelectronic switch with a tandem structureApplied Physics Letters, 1985
- Photoemission studies of the effect of temperature on the Au–GaAs(110) interfaceJournal of Vacuum Science & Technology A, 1983
- Atomic and electronic structure of InP–metal interfaces: A prototypical III–V compound semiconductorJournal of Vacuum Science and Technology, 1981
- Soft X-ray photoemission study of annealed Al-overlayers on GaAs (110)Solid State Communications, 1981
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979