Soft X-ray photoemission study of annealed Al-overlayers on GaAs (110)
- 30 June 1981
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 38 (12) , 1269-1272
- https://doi.org/10.1016/0038-1098(81)91003-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Bonding of Al and Ga to GaAs(110)Journal of Vacuum Science and Technology, 1980
- Photoemission study of the interaction of Al with a GaAs (110) surfaceJournal of Electron Spectroscopy and Related Phenomena, 1979
- Electronic structure of Al chemisorbed on GaAs(110)Journal of Vacuum Science and Technology, 1979
- Chemically Induced Charge Redistribution at Al-GaAs InterfacesPhysical Review Letters, 1979
- Metal–semiconductor surface and interface states on (110) GaAsJournal of Vacuum Science and Technology, 1978
- Electron spectroscopy of GaAs and AlAs surfacesSurface Science, 1975