Implantation Energy Dependence of Composilional Disordering in Si Implanted GaAs/AlGaAs Superlattices Studied by Secondary Jon Mass Speetrometry
- 1 August 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (8A) , L651
- https://doi.org/10.1143/jjap.25.l651
Abstract
Compositional disordering in Si implanted GaAs/AlGaAs superlattices has been studied for various implantation energies by secondary ion mass spectrometry. It is found that at higher energy implantation the disordering is suppressed in the surface region and that the disordering in the deeper region becomes incomplete with the implantation energy. These results are well explained by the formation of damage in the surface region and the reduction of Si concentration, respectively.Keywords
This publication has 6 references indexed in Scilit:
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs SuperlatticeJapanese Journal of Applied Physics, 1986
- Redistribution and Electrical Properties of S Implanted in GaAsJournal of the Electrochemical Society, 1985
- Interdiffusion of Al and Ga in Si-Implanted GaAs–AlAs SuperlatticesJapanese Journal of Applied Physics, 1984
- Disordering of Si-Doped AlAs/GaAs Superlattice by AnnealingJapanese Journal of Applied Physics, 1984
- Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlatticesJournal of Electronic Materials, 1984
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982