Development of advanced CMOS-compatible bipolar transistor for BiCMOS technology

8 December 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (25) , 1581-1583
https://doi.org/10.1049/el:19881078

Abstract

A fully CMOS-compatible single-level polycide bipolar technology is studied. Two dimensional (2D) process simulations of the device have been carried out and compared with SIMS measurements. Fabrication steps, process simulations and first electrical results are presented and discussed.

Keywords

FABRICATION
PROCESS SIMULATIONS
SIMS MEASUREMENTS
SINGLE-LEVEL POLYCIDE
ADVANCED CMOS-COMPATIBLE BIPOLAR TRANSISTOR
BICMOS TECHNOLOGY

This publication has 1 reference indexed in Scilit:

AN IMPROVED FULLY CMOS COMPATIBLE BIPOLAR STRUCTURE
Le Journal de Physique Colloques, 1988