Air-bridge-structured silicon nanowire and anomalous conductivity
- 20 December 1999
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (25) , 3986-3988
- https://doi.org/10.1063/1.125514
Abstract
An air-bridge-structured silicon nanowire was made by micromachining a silicon-on-insulator (SOI) substrate and electrically characterized. The nanowire was isolated from the substrate by an air gap and typically 20–100 nm in diameter and 300–600 nm in length. Current–voltage characteristics of these wires were anomalous electric conductivity such as negative resistance and hysteresis at room temperature. Charge accumulation into surface states is considered a dominant characteristic.Keywords
This publication has 3 references indexed in Scilit:
- Electrical properties of Si nanocrystals embedded in an ultrathin oxideNanotechnology, 1999
- Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator SubstrateJapanese Journal of Applied Physics, 1998
- The interaction of water with solid surfaces: Fundamental aspectsSurface Science Reports, 1987