Characterization of Ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing
- 1 April 1999
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 144-145, 697-701
- https://doi.org/10.1016/s0169-4332(98)00908-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Nanocrystalline-silicon superlattice produced by controlled recrystallizationApplied Physics Letters, 1998
- Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam depositionPhysical Review B, 1997
- Electrical characterization of rapid thermal annealed radio frequency sputtered silicon oxide filmsJournal of Applied Physics, 1996
- Advances in Rapid Thermal and Integrated ProcessingPublished by Springer Nature ,1996
- Visible photoluminescence from nanocrystallite Ge embedded in a glassymatrix: Evidence in support of the quantum-confinement mechanismPhysical Review B, 1995
- Visible photoluminescence in Si+-implanted thermal oxide films on crystalline SiApplied Physics Letters, 1994
- Light Emission from SiliconScience, 1993
- Resonant Raman study of phonon states in gas-evaporated Ge small particlesPhysical Review B, 1993
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Direct evidence of recrystallization rate enhancement during rapid thermal annealing of phosphorus amorphized silicon layersApplied Physics Letters, 1987