Preparation and Properties of Cd1-xMnxS Thin Films
- 1 August 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (8R)
- https://doi.org/10.1143/jjap.33.4540
Abstract
Cd1- x Mn x S thin films have been prepared on glass substrates by coevaporation of CdS and Mn. Single-phase solid solutions with wurtzite structure were produced for a wider range of x up to 0.94 than the previously known soluble range of 0≤x ≤0.5. Lattice constants a and c decrease linearly with increasing x. Band-gap energy E g varies linearly with x in the range of x>0.1, and the value of E g extrapolated to x=1, corresponding to γ-MnS (wurtzite-type), is 3.30 eV at room temperature. The films thus formed are stable for annealing at or below 450° C.Keywords
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