Steric and electronic effects in the molecular quenching of porous silicon luminescence
- 31 October 1996
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 70 (1-6) , 343-351
- https://doi.org/10.1016/0022-2313(96)00069-5
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Energy Transfer Quenching of Porous Si Photoluminescence by Aromatic MoleculesJournal of the American Chemical Society, 1995
- The Quenching of Porous Silicon Photoluminescence by Group 15 Triaryl Derivatives: Effects of Surface Photo‐oxidationJournal of the Electrochemical Society, 1995
- Re-establishment of photoluminescence in Cu quenched porous silicon by acid treatmentJournal of Applied Physics, 1995
- The Impact of Sonication on the Structure and Properties of Stain‐Etch Porous SiliconJournal of the Electrochemical Society, 1994
- Slow decay dynamics of visible luminescence in porous silicon: Hopping of carriers confined on a shell region in nanometer-size Si crystallitesPhysical Review B, 1993
- Proton gated emission from porous siliconJournal of the American Chemical Society, 1993
- Addition of ferrocene derivatives to the surface of quantum-confined cadmium sulfide clusters: steady-state and time-resolved photophysical effectsThe Journal of Physical Chemistry, 1992
- Visible luminescence from silicon wafers subjected to stain etchesApplied Physics Letters, 1992
- Photophysics of quantized colloidal semiconductors. Dramatic luminescence enhancement by binding of simple aminesThe Journal of Physical Chemistry, 1986
- Proton affinities by reactant ion monitoring: Triphenyl group Va compoundsJournal of Mass Spectrometry, 1986