Visible luminescence from silicon wafers subjected to stain etches
- 24 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (8) , 995-997
- https://doi.org/10.1063/1.106485
Abstract
Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. We have observed photoluminescence peaked in the red from stain-etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.Keywords
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