Two-dimensional modeling of the growth of GaAs from (C2H5)2GaCl and AsH3
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 56-63
- https://doi.org/10.1016/0022-0248(92)90437-n
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Epitaxial Growth and Selectivity of Al x Ga1 − x As Using Novel Metalorganic PrecursorsJournal of the Electrochemical Society, 1991
- Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAsJournal of Crystal Growth, 1991
- Flow and heat transfer in CVD reactors: Comparison of Raman temperature measurements and finite element model predictionsJournal of Crystal Growth, 1990
- Simulations of two-dimensional recirculating flow effects in horizontal MOVPEJournal of Crystal Growth, 1989
- Temperature engineered growth of low-threshold quantum well lasers by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Selective Epitaxy of AlxGa1−x as and AlxGal−x as Based StructuresMRS Proceedings, 1989
- The influence of hydrocarbons in MOVPE GaAs growth: Improved detection of carbon by secondary ion mass spectroscopyJournal of Crystal Growth, 1988
- Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasersJournal of Crystal Growth, 1988
- A Mathematical Model of Silicon Chemical Vapor Deposition: Further Refinements and the Effects of Thermal DiffusionJournal of the Electrochemical Society, 1986
- A Mathematical Model of the Coupled Fluid Mechanics and Chemical Kinetics in a Chemical Vapor Deposition ReactorJournal of the Electrochemical Society, 1984