Roughness evolution of Si(111) by low-energy ion bombardment
- 11 September 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 414 (1-2) , 17-25
- https://doi.org/10.1016/s0039-6028(98)00425-7
Abstract
No abstract availableKeywords
This publication has 49 references indexed in Scilit:
- Fractal Concepts in Surface GrowthPublished by Cambridge University Press (CUP) ,1995
- Interaction of 300–5000 eV ions with GaAs(110)Applied Physics Letters, 1994
- Generation and healing of low-energy ion-induced defects on Si(100)-2 × 1Surface Science, 1994
- Real-time observations of vacancy diffusion on Si(001)-(2×1) by scanning tunneling microscopyPhysical Review Letters, 1993
- Fractal Growth PhenomenaPublished by World Scientific Pub Co Pte Ltd ,1992
- Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1Physical Review Letters, 1992
- Dynamics of Fractal SurfacesPublished by World Scientific Pub Co Pte Ltd ,1991
- Theory of ripple topography induced by ion bombardmentJournal of Vacuum Science & Technology A, 1988
- A mechanism of surface micro-roughening by ion bombardmentJournal of Materials Science, 1973
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969