Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1
- 3 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (5) , 646-649
- https://doi.org/10.1103/physrevlett.68.646
Abstract
Preferential annihilation of mobile surface vacancies at the ends, rather than the sides, of dimer rows leads to a new, nonequilibrium, single-domain phase of Si(100) that is not accessible by epitaxial growth, but is stable at moderate temperatures (T∼450 °C). These results emerge from a tunneling-microscope study of layer-by-layer removal of Si from Si(100) under 225-eV Xe-ion bombardment.Keywords
This publication has 17 references indexed in Scilit:
- Surface reconstruction in layer-by-layer sputtering of Si(111)Physical Review B, 1991
- Layer-by-layer sputtering and epitaxy of Si(100)Physical Review Letters, 1991
- Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Observation of sputtering damage on Au(111)Surface Science, 1990
- Growth of Si on flat and vicinal Si(001) surfaces: A scanning tunneling microscopy studyJournal of Vacuum Science & Technology B, 1990
- Scanning-tunneling-microscopy study of single-domain Si(001) surfaces grown by molecular-beam epitaxyPhysical Review Letters, 1989
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- RHEED-intensity oscillations of alternating surface reconstructions during Si MBE growth on single-domain Si(001)-2×1 surfaceJournal of Crystal Growth, 1987
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- "Two-Layer" Behavior of the Pt(111) Surface during Low-Energy-Ion Sputtering at High TemperaturesPhysical Review Letters, 1984