Surface reconstruction in layer-by-layer sputtering of Si(111)
- 15 December 1991
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (24) , 13783-13786
- https://doi.org/10.1103/physrevb.44.13783
Abstract
Using scanning tunneling microscopy, we have investigated vacancy-mediated, layer-by-layer removal of surface atoms from Si(111) under 225-eV Xe-ion bombardment. We observe, with increasing substrate temperature, both the transition from vacancy-cluster nucleation to step retraction, and a transition from disruption to preservation of the 7×7 reconstruction on exposed material. We discuss the consequences of these observations for ion-beam-mediated epitaxy.Keywords
This publication has 16 references indexed in Scilit:
- Layer-by-layer sputtering and epitaxy of Si(100)Physical Review Letters, 1991
- Radiation damage in silicon (001) due to low energy (60–510 eV) argon ion bombardmentSurface Science, 1990
- Ion beam enhanced epitaxial growth of Ge (001)Applied Physics Letters, 1990
- Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Observation of sputtering damage on Au(111)Surface Science, 1990
- Partitioning of ion-induced surface and bulk displacementsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Monolayer and bilayer growth on Ge(111) and Si(111)Surface Science, 1987
- New Reconstructions on Silicon (111) SurfacesPhysical Review Letters, 1986
- Intensity oscillations of reflection high-energy electron diffraction during silicon molecular beam epitaxial growthApplied Physics Letters, 1985
- "Two-Layer" Behavior of the Pt(111) Surface during Low-Energy-Ion Sputtering at High TemperaturesPhysical Review Letters, 1984