Design of atomically abrupt solid interfaces
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 60-61, 613-618
- https://doi.org/10.1016/0169-4332(92)90484-f
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Phase stability versus the lattice mismatch of (100)Co1−xGax thin films on (100)GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Characterization of the CoGa/GaAs interfaceApplied Physics Letters, 1989
- Interfacial reactions of cobalt thin films on (001) GaAsJournal of Electronic Materials, 1988
- Schottky-barrier heights of single-crystalon Si(111): The effect of a surfacep-njunctionPhysical Review B, 1986
- Entropy-driven loss of gas phase group V species from gold/III-V compound semiconductor systemsJournal of Materials Research, 1986
- Solid phase equilibria in the Au-Ga-As, Au-Ga-Sb, Au-In-As, and Au-In-Sb ternariesJournal of Materials Research, 1986
- The formation of the AuGaAs(001) interfaceSurface Science, 1986
- Electrical Properties, Structure, and Phase Morphology of Au‐Ga Alloy Films Codeposited on GaAs SubstratesJournal of the Electrochemical Society, 1985
- Interfacial reactions between gold thin films and GaAs substratesThin Solid Films, 1984
- Dissociation of GaAs and Ga0.7Al0.3As during alloying of gold contact filmsSolid-State Electronics, 1979