New method for producing ideal metal-semiconductor ohmic contacts
- 5 September 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (18) , 372-373
- https://doi.org/10.1049/el:19740295
Abstract
A new understanding of ohmic-contact alloying in terms of liquid-epitaxy processes has led to improved contact fabrication by using a slow alloying cycle with an As overpressure chamber. A conveniently wide range of As pressures is possible when Ga is deposited together with the other metals.Keywords
This publication has 2 references indexed in Scilit:
- Diffusion in the III–V Compound SemiconductorsPublished by Springer Nature ,1973
- Chapter 2 The Voltage–Current Characteristic of Metal–Semiconductor ContactsPublished by Elsevier ,1971