Very Shallow Trapping State in Doped Germanium
- 20 October 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (16) , 1095-1098
- https://doi.org/10.1103/physrevlett.35.1095
Abstract
Submillimeter photoconductivity in doped germanium has been studied with a lamellar grating spectrophotometer. The observed photoconductivity is ascribed to a shallow trapping state such as or . However, our spectral peak energies and shapes are quite different from those previously reported by Gershenzon, Gol'tsman, and Mel'nikov.
Keywords
This publication has 4 references indexed in Scilit:
- Far-Infrared Photoconductivity and Photo-Hall Effects in Antimony Doped GermaniumJournal of the Physics Society Japan, 1973
- Impurity Conduction in the Intermediate Concentration RegionPhysical Review B, 1965
- Mobile and Immobile Effective-Mass-Particle Complexes in Nonmetallic SolidsPhysical Review Letters, 1958
- Quantum Mechanics of One- and Two-Electron AtomsPublished by Springer Nature ,1957