Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodes
- 15 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (2) , 198-200
- https://doi.org/10.1063/1.94279
Abstract
The impact ionization process in the 〈100〉, 〈110〉, and 〈111〉 crystallographic directions in InP has been investigated by analysis of photomultiplication and multiplication noise data from InP avalanche photodiodes. This is the first report of such measurements for (110)-oriented InP and the first consistent investigation of impact ionization in the three principal crystallographic directions. Our measurements indicate that, unlike the reports for GaAs, no significant orientation dependence of the impact ionization coefficients exists in InP. Momentum-randomizing collisions with phonons, which result in intervalley transfer of energetic electrons, are believed to be the reason for the lack of anisotropy in the electron impact ionization coefficients.Keywords
This publication has 22 references indexed in Scilit:
- A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage currentApplied Physics Letters, 1981
- Avalanche multiplication and noise characteristics of low-dark-current GaInAsP/InP avalanche photodetectorsApplied Physics Letters, 1980
- Crystal orientation dependence of ionization rates in germaniumApplied Physics Letters, 1980
- Ionization coefficients measured in abrupt InP junctionsApplied Physics Letters, 1980
- Ionization coefficients of electrons and holes in InPApplied Physics Letters, 1979
- InGaAsP heterostructure avalanche photodiodes with high avalanche gainApplied Physics Letters, 1979
- The band structure dependence of impact ionization by hot carriers in semiconductors: GaAsSolid-State Electronics, 1978
- The distribution of gains in uniformly multiplying avalanche photodiodes: TheoryIEEE Transactions on Electron Devices, 1972
- Avalanche-Photodiode Frequency ResponseJournal of Applied Physics, 1967
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966