The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs
- 1 January 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (1) , 297-302
- https://doi.org/10.1016/0038-1101(78)90151-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Temperature Dependence of the Energy Gap in GaAs and GaPJournal of Applied Physics, 1969
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- The semi-empirical approach to band structureJournal of Physics and Chemistry of Solids, 1959