Impact ionization coefficients for electrons and holes in In0.14Ga0.86As
- 15 September 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (6) , 330-332
- https://doi.org/10.1063/1.88489
Abstract
We report the measurement of impact ionization rates for electrons and holes in the direct band‐gap semiconductor alloy In0.14Ga0.86As. Our results show clearly that the ionization rate for holes is greater than that for electrons. The measurments were made for electric fields between 2.6×105 and 3.4×105 V cm−1. In this range, the ionization coefficients can be expressed as α=α∞ exp(‐A/E) for electrons and β=β∞ exp(‐B/E) for holes with α∞=1.0×109 cm−1, A=3.6×106 V cm−1, and β∞=1.3×108 cm−1, B=2.7×106 V cm−1.Keywords
This publication has 10 references indexed in Scilit:
- Growth and characterization of liquid−phase epitaxial InxGa1−xAsJournal of Applied Physics, 1975
- Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengthsApplied Physics Letters, 1974
- Unequal electron and hole impact ionization coefficients in GaAsApplied Physics Letters, 1974
- cw laser diodes and high-power arrays of InxGa1−xAs for 1.06-μm emissionApplied Physics Letters, 1974
- Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μmApplied Physics Letters, 1974
- Use of a Schottky barrier to measure impact ionization coefficients in semiconductorsSolid-State Electronics, 1973
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1962
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957