Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengths
- 1 August 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (3) , 146-148
- https://doi.org/10.1063/1.1655416
Abstract
We report the growth and fabrication of LPE multilayer Inx Ga1 −x As homojunction LEDs. Junction edge emission in the 1.0–1.1‐μm wavelength range was obtained with external efficiencies of ∼1%. An important feature of the device structure is the incorporation of simple stepwise compositional grading for lattice matching of the substrate and p‐n junction layers.Keywords
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