V-band high-efficiency high-power AlInAs/GaInAs/InP HEMTs
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- High performance V-band low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 60 GHz power amplifier using PHEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Millimeter wave power performance of InAlAs/InGaAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-power V-band pseudomorphic InGaAs HEMTIEEE Electron Device Letters, 1991
- Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTsIEEE Electron Device Letters, 1989