Recrystallization of amorphous gallium arsenide by ion beams

Publisher Website
Google Scholar
Abstract
An 11‐MV arsenic beam was used to amorphize approximately 3.9 μm of GaAs surface layer at liquid nitrogen temperature. It was found that apparently amorphous gallium arsenide can be reconverted to single crystal by subsequent implantation at higher temperature. The recrystallization by the ion beam proceeded simultaneously from the amorphous surface and the deep amorphous/crystalline interface. Growth of dendrites and/or microtwins occurred at the recrystallizing interfaces. From the comparison of the nuclear stopping curve with the damage distribution in cross‐sectional transmission electron micrograph, the threshold value for converting crystalline GaAs into amorphous GaAs was measured to be between 2–5×1020 keV cm−3.