Gallium plus metal contacts to gallium arsenide alloyed in an arsenic molecular beam

This publication has 24 references indexed in Scilit:

• Room-temperature interfacial reaction in Au-semiconductor systems
  Applied Physics Letters, 1977
• A Degradation Mechanism for Ohmic Contacts in GaAs Devices
  Japanese Journal of Applied Physics, 1977
• Liquid phase epitaxial growth of GaAs from AuGeNi melts
  Solid-State Electronics, 1977
• Investigation of the AuGeNi system used for alloyed contacts to GaAs
  Solid-State Electronics, 1977
• High temperature annealing behaviour of Schottky barriers on GaAs with gold and gold-gallium contacts
  Solid-State Electronics, 1977
• Electron Microscopy Studies of the Alloying Behavior of Au on GaAs
  Physica Status Solidi (a), 1975
• Thin-phase epitaxy for good semiconductor metal ohmic contacts
  IEEE Transactions on Electron Devices, 1975
• Alloying Behavior of Au and Au–Ge on GaAs
  Journal of Applied Physics, 1971
• Ohmic contacts for GaAs devices
  Solid-State Electronics, 1967
• Metal-semiconductor contacts for GaAs bulk effect devices
  Solid-State Electronics, 1967