Minority carriers lifetime degradation during ion implanted silicon solar cell processing
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 809-813
- https://doi.org/10.1051/rphysap:019780013012080900
Abstract
In this work a silicon solar cell fabrication process based on ion implantation followed by low temperature thermal annealing is analysed. It is shown, by using the surface photovoltage technique, that the base lifetime degradation can be almost completely avoided, so that ion implanted solar cells with high conversion efficiency can be fabricatedKeywords
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