Photoconductivity and absorption measurements on (100) and (911) Si MOSFETs
- 1 May 1978
- journal article
- Published by Elsevier in Surface Science
- Vol. 73, 166-169
- https://doi.org/10.1016/0039-6028(78)90486-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- On the discrepancies between absorption and photoconductivity measurements in silicon inversion layersSolid State Communications, 1977
- Inter-subband optical absorption in space-charge layers on semiconductor surfacesZeitschrift für Physik B Condensed Matter, 1977
- Intersubband spectroscopy by photoconductivity and absorption in inversion layers onPhysical Review B, 1977
- Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron GasPhysical Review Letters, 1977
- Electronic levels in surface space charge layers on Si(100)Physical Review B, 1976
- Resonance Spectroscopy of Electronic Levels in a Surface Accumulation LayerPhysical Review Letters, 1974