On the discrepancies between absorption and photoconductivity measurements in silicon inversion layers
- 31 October 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 24 (1) , 47-50
- https://doi.org/10.1016/0038-1098(77)90562-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Far infrared resonant magnetoabsorption in low density Si inversion layersSolid State Communications, 1977
- Inter-subband spectroscopy in hole space charge layers on (110) and (111) Si surfacesSolid State Communications, 1977
- Voltage-Tunable Far-Infrared Emission from Si Inversion LayersPhysical Review Letters, 1976
- Electronic levels in surface space charge layers on Si(100)Physical Review B, 1976
- Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of siliconSurface Science, 1976
- Resonance Spectroscopy of Electronic Levels in a Surface Accumulation LayerPhysical Review Letters, 1974