Inter-subband spectroscopy in hole space charge layers on (110) and (111) Si surfaces
- 28 February 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 21 (8) , 823-826
- https://doi.org/10.1016/0038-1098(77)91162-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Self-consistent numerical solutions of p-type inversion layers in silicon mos devicesSolid State Communications, 1976
- Electronic levels in surface space charge layers on Si(100)Physical Review B, 1976
- Spectroscopy of surface space charge layersSurface Science, 1976
- The Electronic Structure ofp-Channel Inversion Layers of Silicon (100) M.O.S.: Many-Body Effects on SubbandsJournal of the Physics Society Japan, 1976
- Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.Progress of Theoretical Physics Supplement, 1975
- Shubnikov-de Haas oscillations in p-type inversion layers on n-type siliconSolid State Communications, 1974
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Ideal MOS Curves for SiliconBell System Technical Journal, 1966
- Simple Technique for Making an Electric Contact on SiliconReview of Scientific Instruments, 1964