A model for reactive sputtering with magnetrons
- 31 December 1989
- Vol. 39 (10) , 949-954
- https://doi.org/10.1016/0042-207x(89)90707-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A physical model for eliminating instabilities in reactive sputteringJournal of Vacuum Science & Technology A, 1988
- Predicting thin-film stoichiometry in reactive sputteringJournal of Applied Physics, 1988
- Modeling of reactive sputtering of compound materialsJournal of Vacuum Science & Technology A, 1987
- Hysteresis effect in reactive sputtering: a problem of system stabilityJournal of Physics D: Applied Physics, 1986
- The use of nitrogen flow as a deposition rate control in reactive sputteringJournal of Vacuum Science & Technology A, 1986
- Reactive sputter deposition: A quantitative analysisThin Solid Films, 1984
- Preferential ionization in reactive sputtering dischargesThin Solid Films, 1984
- Influence of the nitrogen partial pressure on the properties of d.c.-sputtered titanium and titanium nitride filmsThin Solid Films, 1984
- The deposition rate of metallic thin films in the reactive sputtering processThin Solid Films, 1975