Perimeter effect in advanced self-aligned bipolar transistor
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 206-209
- https://doi.org/10.1109/bipol.1988.51080
Abstract
Emitter perimeter effects in advanced self-aligned bipolar transistors utilizing a sidewall spacer technology have been studied. Collector-emitter punchthrough, emitter current crowding and base resistance increment due to insufficient extrinsic-intrinsic base overlap in the emitter periphery, and the lowering of cutoff frequency and the tunneling current due to the lateral encroachment of the extrinsic-base into the intrinsic-base area are discussed. Particular emphasis is placed on the dependence of the degree of the extrinsic-intrinsic base overlap on the sidewall spacer length and the extrinsic-base profile. The balance between increasing the base resistance increment and decreasing the cutoff frequency is a device design tradeoff, as is the balance between the perimeter punchthrough current and the perimeter tunneling current.<>Keywords
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