Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 811-814
- https://doi.org/10.1109/iedm.1996.554103
Abstract
Accurate doping profiles are needed to simulate device characteristics. We use capacitance-voltage curves to interrogate the doping profiles, threshold voltage, body effect, poly depletion and oxide thickness on a range of technology generations down to 0.18 /spl mu/m. Proper modeling of both transient enhanced diffusion (TED) and quantum mechanical (QM) effects is essential to ensure the simulations match all aspects of the C-V data. The agreement confirms that the predicted doping profiles are accurate. Device simulations using these doping profiles give the correct threshold voltage, body effect and DIBL characteristics.Keywords
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