New insight into the kinetics of Stranski–Krastanow growth of Ge on Si(001)
- 20 October 2001
- journal article
- Published by Elsevier in Surface Science
- Vol. 492 (3) , 255-269
- https://doi.org/10.1016/s0039-6028(01)01455-8
Abstract
No abstract availableThis publication has 44 references indexed in Scilit:
- Shape Transition in Growth of Strained IslandsPhysical Review Letters, 1999
- Equilibrium Shapes and Properties of Epitaxially Strained IslandsPhysical Review Letters, 1997
- Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at EquilibriumPhysical Review Letters, 1997
- Structural Transition in Large-Lattice-Mismatch HeteroepitaxyPhysical Review Letters, 1996
- In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I.Surface Science, 1996
- Spontaneous Ordering of Arrays of Coherent Strained IslandsPhysical Review Letters, 1995
- Origin of Self-Assembled Quantum Dots in Highly Mismatched HeteroepitaxyPhysical Review Letters, 1995
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994
- Clustering on surfacesSurface Science Reports, 1992
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990